Mitsubishi Electric has long supported the advancement of wireless communication networks through the development of its high frequency devices. Our range of high frequency devices are contributing to the wireless communications infrastructure, helping achieve more reliable wireless communications such as satellite communications, as well as smaller and more powerful mobile phones, and other high-performance network equipment.

High Frequency Devices
Applications

GaN High Frequency Devices
Silicon RF High Power Devices

GaN high frequency devices support high frequency high power transmitter applications such as Satellite Communication (SATCOM), Base Station with higher power, efficiency and broader frequency bandwidth.

GaN High Frequency Devices

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Part Number	Supply Status	Frequency	Drain-Source Voltage (V)	Drain Current (mA)	Drain Voltage (V)	Output Power (W)	Package	Power Added Efficiency (%)
MGFG5H1503	Active	13.75～14.5 (GHz)	24	N/A	N/A	20	GF-65	N/A
MGFK48G3745	Active	13.75～14.5 (GHz)	24	N/A	N/A	70	GF-68	33
MGFK48G3745A	Active	13.75～14.5 (GHz)	24	N/A	N/A	70	GF-68	31
MGFK50G3745	Active	13.75～14.5 (GHz)	24	N/A	N/A	100	GF-69	30
MGFS37G38L2	Active	2.5~3.8 (GHz)	50	N/A	N/A	5	GF-67	60

Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band from 3MHz to 1GHz with supply voltages from 3V to 15V and output power levels from 1W to 100W.

Filter Devices

Silicon RF High Power Devices

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Part Number	Supply Status	Frequency	Drain-Source Voltage (V)	Drain Current (mA)	Drain Voltage (V)	Output Power (W)	Package	Power Added Efficiency (%)
RA03M8087M	Active	806～870 (MHz)	N/A	N/A	7.2	3.6	H46S	N/A
RA03M8894M	Active	889～941 (MHz)	N/A	N/A	7.2	3.6	H46S	N/A
RA07H4047M	Active	400～470 (MHz)	N/A	N/A	12.5	7	H46S	N/A
RA07H4452M	Active	440～520 (MHz)	N/A	N/A	12.5	7	H46S	N/A
RA07M1317M	Active	135～175 (MHz)	N/A	N/A	7.2	6.5	H46S	N/A
RA07M3847M	Active	378～470 (MHz)	N/A	N/A	7.2	7	H46S	N/A
RA07M4452M	Active	440～520 (MHz)	N/A	N/A	7.2	7	H46S	N/A
RA07N4047M	Active	400～470 (MHz)	N/A	N/A	9.6	7.5	H46S	N/A
RA07N4452M	Active	440～520 (MHz)	N/A	N/A	9.6	7.5	H46S	N/A
RA08H1317M	Active	135～175 (MHz)	N/A	N/A	12.5	8	H46S	N/A
RA08N1317M	Active	135～175 (MHz)	N/A	N/A	9.6	8	H46S	N/A
RA30H0608M1	Active	68～88 (MHz)	N/A	N/A	12.5	30	H2M	N/A
RA30H1317M1	Active	135～175 (MHz)	N/A	N/A	12.5	30	H2M	N/A
RA30H2127M1	Active	210～275 (MHz)	N/A	N/A	12.5	30	H2M	N/A
RA30H3340M1	Active	330～400 (MHz)	N/A	N/A	12.5	30	H2M	N/A
RA30H3847M1	Active	378～470 (MHz)	N/A	N/A	12.5	30	H2M	N/A
RA30H3847M1A	Active	378～470 (MHz)	N/A	N/A	12.5	30	H2M(A)	N/A
RA30H4452M1	Active	440～520 (MHz)	N/A	N/A	12.5	30	H2M	N/A
RA30H4452M1A	Active	440～520 (MHz)	N/A	N/A	12.5	30	H2M(A)	N/A
RA33H1516M1	Active	154～162 (MHz)	N/A	N/A	12.5	33	H57	N/A
RA60H1317M1A	Active	136～174 (MHz)	N/A	N/A	12.5	60	H2M	N/A
RA60H1317M1B	Active	136～174 (MHz)	N/A	N/A	12.5	60	H2M(A)	N/A
RA60H3340M1A	Active	330～400 (MHz)	N/A	N/A	12.5	60	H2M(A)	N/A
RA60H3847M1	Active	378～470 (MHz)	N/A	N/A	12.5	60	H2M	N/A
RA60H3847M1A	Active	378～470 (MHz)	N/A	N/A	12.5	60	H2M(A)	N/A
RA60H4452M1	Active	440～520 (MHz)	N/A	N/A	12.5	60	H2M	N/A
RA60H4452M1A	Active	440～520 (MHz)	N/A	N/A	12.5	60	H2M(A)	N/A
RA80H1415M1	Active	144~148 / 136~174 (MHz)	N/A	N/A	12.5	80.0 /60.0	H2M	N/A
RD01MUS2	Active	520 (MHz)	N/A	N/A	7.2	0.8	SOT-89	N/A
RD01MUS2B	Active	527 (MHz)	N/A	N/A	7.2	1	SOT-89	N/A
RD01MUS3	Active	175 / 530 / 940 (MHz)	N/A	N/A	7.2	1	QFN(4mm)	N/A
RD02LUS2	Active	470 (MHz)	N/A	N/A	3.6	2.3(typ)	SOT-89	N/A
RD02MUS2	Active	175 / 520 (MHz)	N/A	N/A	7.2	2	SLP	N/A
RD04HMS2	Active	750 / 950 (MHz)	N/A	N/A	12.5	5.5 / 5.0(typ)	SLP	N/A
RD04LUS2	Active	527 (MHz)	N/A	N/A	3.6	3.6	SLP	N/A
RD05MMP1	Active	941 (MHz)	N/A	N/A	7.2	5.5	PMM	N/A
RD06HHF1	Active	30 (MHz)	N/A	N/A	12.5	6	TO-220S	N/A
RD06HHS2	Active	30 / 175 (MHz)	N/A	N/A	12.5	6	SLP	N/A
RD06HVF1	Active	175 (MHz)	N/A	N/A	12.5	6	TO-220S	N/A
RD07MUS2B	Active	175 / 527 / 870 (MHz)	N/A	N/A	7.2	7	SLP	N/A
RD07MVS1	Active	175 / 520 (MHz)	N/A	N/A	7.2	7	SLP	N/A
RD08MUS2	Active	527 (MHz)	N/A	N/A	7.2	7.5	SLP	N/A
RD09MUP2	Active	520 (MHz)	N/A	N/A	7.2	8	PMM	N/A
RD100HHF1C	Active	30 (MHz)	N/A	N/A	12.5	100	Ceramic(Large)	N/A
RD10HMS2	Active	870 (MHz)	N/A	N/A	12.5	11	SLP	N/A
RD10MMS2	Active	870 (MHz)	N/A	N/A	7.2	9	SLP	N/A
RD12MVP1	Active	175 (MHz)	N/A	N/A	7.2	10	PMM	N/A
RD12MVS1	Active	175 (MHz)	N/A	N/A	7.2	11.5	SLP	N/A
RD15HVF1	Active	175 (MHz)	N/A	N/A	12.5	15	TO-220S	N/A
RD16HHF1	In Development	30 (MHz)	N/A	N/A	12.5	16	TO-220S	N/A
RD32HMP2	Active	870 (MHz)	N/A	N/A	12.5	35	HPM005	N/A
RD35HUF2	Not Recommended for New Designs	175 / 530 (MHz)	N/A	N/A	12.5	45 / 43(typ)	HPM	N/A
RD35HUP2	Active	175 / 530 (MHz)	N/A	N/A	12.5	35(typ)	HPM005	N/A
RD50HMS2	Active	900 (MHz)	N/A	N/A	12.5	57(typ)	HPM	N/A
RD60HMP2	Active	870 (MHz)	N/A	N/A	12.5	70	HPM006	N/A
RD60HUF1C	Active	520 (MHz)	N/A	N/A	12.5	60	Ceramic(Large)	N/A
RD70HUF2	Not Recommended for New Designs	175 / 530 (MHz)	N/A	N/A	12.5	84 / 75(typ)	HPM	N/A
RD70HUP2	Active	175 / 530 (MHz)	N/A	N/A	12.5	84 / 75(typ)	HPM006	N/A
RD70HVF1C	Active	175 / 520 (MHz)	N/A	N/A	12.5	70 / 50	Ceramic(Large)	N/A

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High Frequency Devices

GaN High Frequency Devices

Silicon RF High Power Devices