Overview
GaN HEMT with an N-channel schottky gate designed for Ku-band applications.
Key Features
- High voltage operation: VDS=24V
- High output power: Po=48.3dBm (TYP.) @Pin=42dBm
- High efficiency: PAE=33% (TYP.) @Pin=42.dBm
- Designed for use in Class AB linear amplifiers
Specifications
Frequency (GHz) | 13.75~14.5 |
---|---|
Frequency (MHz) | |
Drain-Source Voltage (V) | 24 |
Drain Current (mA) | |
Drain Voltage (V) | |
Drain Efficiency (Min %) | |
Output Power (W) | 70 |
Input Power (Typ. W) | |
Package | GF-68 |
Power Added Efficiency (%) | 33 |
Linear Power Gain (dB) | 9.0(min) 10.0(typ) |
Noise Figure (dB) | |
Associated Gain (dB) |

