Overview
GaN HEMT with an N-channel schottky gate designed for Ku-band applications.
Key Features
- High voltage operation
- High output power
- High efficiency
- Designed for use in Class AB linear amplifier
Specifications
| Frequency (GHz) | 27.5～31.0 |
|---|---|
| Drain-Source Voltage (V) | 22 |
| Output Power (W) | 14 |
| Package | Bare chip |
| Power Added Efficiency (%) | 32 |
| Linear Power Gain (dB) | 24 |
