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Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W.

Key Features

  • High Power Gain and High Efficiency
  • Integrated gate protection diode
  • Designed for VHF/UHF RF power amplifier applications


Frequency (MHz) 175 / 530
Drain Voltage (V) 12.5
Drain Efficiency (Min %) 55(typ)
Output Power (W) 35(typ)
Input Power (Typ. W) 3
Package HPM005