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Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W.

Key Features

  • High Power Gain and High Efficiency
  • Integrated gate protection diode
  • Designed specifically for VHF/UHF/940MHz-band power amplifier applications


Frequency (MHz) 175 / 530 / 940
Drain Voltage (V) 7.2
Drain Efficiency (Min %) 50
Output Power (W) 1
Input Power (Typ. W) 0.001
Package QFN(4mm)