Overview
GaN HEMT with an N-channel Schottky gate designed for S-band base transmitter station applications.
Key Features
- High Voltage Operation: VDS=50V
- High Output Power: 37dBm (typ.) @ Psat, f=3.5GHz, Single Path
- High Efficiency: 60% (typ.) @ Psat, f=3.5GHz, Single Path
- High Gain: 18dB (typ.) @ f=3.5GHz, Single Path
Specifications
| Frequency (GHz) | 3.6~4.0 |
|---|---|
| Drain-Source Voltage (V) | 46 |
| Output Power (W) | 16 |
| Package | GH-85 |
| Power Added Efficiency (%) | 41 |
| Linear Power Gain (dB) | 30 |
