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GaN HEMT with an N-channel schottky gate designed for Ku-band applications.

Key Features

  • High voltage operation
  • High output power
  • High efficiency
  • Designed for use in Class AB linear amplifier


Frequency (GHz) 13.75~14.5
Frequency (MHz)
Drain-Source Voltage (V) 24
Drain Current (mA)
Drain Voltage (V)
Drain Efficiency (Min %)
Output Power (W) 100
Input Power (Typ. W)
Package GF-69
Power Added Efficiency (%) 30
Linear Power Gain (dB) 8.0(min) 9.2(typ)
Noise Figure (dB)
Associated Gain (dB)
RoHS Compliant Reach Compliant