Overview
GaN HEMT with an N-channel schottky gate designed for Ku-band applications.
Key Features
- High voltage operation
- High output power
- High efficiency
- Designed for use in Class AB linear amplifier
Specifications
| Frequency (GHz) | 13.75～14.5 |
|---|---|
| Frequency (MHz) | |
| Drain-Source Voltage (V) | 24 |
| Drain Current (mA) | |
| Drain Voltage (V) | |
| Drain Efficiency (Min %) | |
| Output Power (W) | 100 |
| Input Power (Typ. W) | |
| Package | GF-69 |
| Power Added Efficiency (%) | 30 |
| Linear Power Gain (dB) | 8.0(min) 9.2(typ) |
| Noise Figure (dB) | |
| Associated Gain (dB) |
