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GaN HEMT with an N-channel schottky gate designed for Ku-band applications with multi-carrier operation.

Key Features

  • High voltage operation: VDS=24V
  • High output power: Po=48.3dBm (TYP.) @Pin=42dBm
  • High efficiency: PAE=33% (TYP.) @Pin=42.dBm
  • Wide offset frequency: Up to 400MHz
  • Designed for use in Class AB linear amplifiers


Frequency (GHz) 13.75~14.5
Frequency (MHz)
Drain-Source Voltage (V) 24
Drain Current (mA)
Drain Voltage (V)
Drain Efficiency (Min %)
Output Power (W) 70
Input Power (Typ. W)
Package GF-68
Power Added Efficiency (%) 31
Linear Power Gain (dB) 11
Noise Figure (dB)
Associated Gain (dB)
RoHS Compliant Reach Compliant