Overview
GaN HEMT with an N-channel schottky gate designed for Ku-band applications with multi-carrier operation.
Key Features
- High voltage operation: VDS=24V
- High output power: Po=48.3dBm (TYP.) @Pin=42dBm
- High efficiency: PAE=33% (TYP.) @Pin=42.dBm
- Wide offset frequency: Up to 400MHz
- Designed for use in Class AB linear amplifiers
Specifications
| Frequency (GHz) | 13.75～14.5 |
|---|---|
| Frequency (MHz) | |
| Drain-Source Voltage (V) | 24 |
| Drain Current (mA) | |
| Drain Voltage (V) | |
| Drain Efficiency (Min %) | |
| Output Power (W) | 70 |
| Input Power (Typ. W) | |
| Package | GF-68 |
| Power Added Efficiency (%) | 31 |
| Linear Power Gain (dB) | 11 |
| Noise Figure (dB) | |
| Associated Gain (dB) |
