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Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W.

Key Features

  • High Power Gain and High Efficiency
  • Integrated gate protection diode
  • Designed for VHF/UHF/890-950MHz RF power amplifier applications


Frequency (MHz) 750 / 950
Drain Voltage (V) 12.5
Drain Efficiency (Min %) 73 / 58(typ)
Output Power (W) 5.5 / 5.0(typ)
Input Power (Typ. W) 0.2
Package SLP