Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W.
- High Power Gain and High Efficiency
- Integrated gate protection diode
- Designed for HF RF power amplifier applications
|Drain Voltage (V)||12.5|
|Drain Efficiency (Min %)||55|
|Output Power (W)||6|
|Input Power (Typ. W)||0.15|