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Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W.

Key Features

  • High Power Gain and High Efficiency
  • Integrated gate protection diode
  • Designed for UHF RF power amplifier applications


Frequency (GHz)
Frequency (MHz) 941
Drain-Source Voltage (V)
Drain Current (mA)
Drain Voltage (V) 7.2
Drain Efficiency (Min %) 43
Output Power (W) 5.5
Input Power (Typ. W) 0.7
Package PMM
Power Added Efficiency (%)
Linear Power Gain (dB)
Noise Figure (dB)
Associated Gain (dB)