Overview
GaN HEMT with an N-channel Schottky gate designed for S-band base transmitter station applications.
Key Features
- High Voltage Operation: VDS=50V
- High Output Power: 37dBm (typ.) @ Psat, f=3.5GHz, Single Path
- High Efficiency: 60% (typ.) @ Psat, f=3.5GHz, Single Path
- High Gain: 18dB (typ.) @ f=3.5GHz, Single Path
Specifications
Frequency (GHz) | 2.5~3.8 |
---|---|
Frequency (MHz) | |
Drain-Source Voltage (V) | 50 |
Drain Current (mA) | |
Drain Voltage (V) | |
Drain Efficiency (Min %) | |
Output Power (W) | 5 |
Input Power (Typ. W) | |
Package | GF-67 |
Power Added Efficiency (%) | 60 |
Linear Power Gain (dB) | 17(min.) 18(typ.) |
Noise Figure (dB) | |
Associated Gain (dB) |

