Overview
GaN HEMT with an N-channel Schottky gate designed for S-band base transmitter station applications.
Key Features
- High Voltage Operation: VDS=50V
- High Output Power: 37dBm (typ.) @ Psat, f=3.5GHz, Single Path
- High Efficiency: 60% (typ.) @ Psat, f=3.5GHz, Single Path
- High Gain: 18dB (typ.) @ f=3.5GHz, Single Path
Specifications
| Frequency (GHz) | 2.5~3.8 |
|---|---|
| Frequency (MHz) | |
| Drain-Source Voltage (V) | 50 |
| Drain Current (mA) | |
| Drain Voltage (V) | |
| Drain Efficiency (Min %) | |
| Output Power (W) | 5 |
| Input Power (Typ. W) | |
| Package | GF-67 |
| Power Added Efficiency (%) | 60 |
| Linear Power Gain (dB) | 17(min.) 18(typ.) |
| Noise Figure (dB) | |
| Associated Gain (dB) |
