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Mitsubishi Electric's Hybrid SiC power modules have improved power loss reduction through optimized IGBT and Diode configuration

Key Features

  • SiC-MOSFET built in power module
  • Contributes to a reduction in system power loss through optimized IGBT and Diode 3-Level T-Type internal circuit
  • Reduction in surge voltage due to low inductance package


Rated Voltage (Vces)/(Vds) 1200
Rated Current (Ices)/(Ids) 600
Viso (Vrms) 4000
Connection Type 3 Level T-Type
Package Type DX-L
Package/Dimensions (mm) 152 × 121.7
RoHS Compliant UL Compliant