Overview
Mitsubishi Electric's Hybrid SiC-SBD (Schottky Barrier Diode) for power supply systems aids in the reduction of system power loss and system size.
Key Features
- Power loss is reduced by 21% compared to Mitsubishi's conventional Si diode
- The SiC-SBD allows for high-frequency switching and allows for a smaller reactor, heat sink and other periphereal components
- JBS structure allows for high forward surge capability and contributes to improved reliability
Specifications
| Rated Voltage (Vces)/(Vds) | 600 |
|---|---|
| Rated Current (Ices)/(Ids) | 20 |
| Viso (Vrms) | 0 |
| Connection Type | Single |
| Package Type | TO-263S-3 |
| Package/Dimensions (mm) | 10.2 x 15 |