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Mitsubishi Electric's Hybrid SiC-SBD (Schottky Barrier Diode) for power supply systems aids in the reduction of system power loss and system size.

Key Features

  • Power loss is reduced by 21% compared to Mitsubishi's conventional Si diode
  • The SiC-SBD allows for high-frequency switching and allows for a smaller reactor, heat sink and other periphereal components
  • JBS structure allows for high forward surge capability and contributes to improved reliability


Rated Voltage (Vces)/(Vds) 1200
Rated Current (Ices)/(Ids) 10
Viso (Vrms) 0
Connection Type Single
Package Type TO-247-2
Package/Dimensions (mm) 15.94 x 41.02