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Overview

Super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

Key Features

  • Low noise figure:
    • NFmin. = 0.95dB (Typ.) @ f=20GHz
  • High associated gain:
    • Gs = 11.5dB (Typ.) @ f=20GHz

Specifications

Frequency (GHz) 20
Frequency (MHz)
Drain-Source Voltage (V) 2
Drain Current (mA) 10
Drain Voltage (V)
Drain Efficiency (Min %)
Output Power (W)
Input Power (Typ. W)
Package GD-30
Power Added Efficiency (%)
Linear Power Gain (dB)
Noise Figure (dB) 0.95(typ) 1.25(max)
Associated Gain (dB) 9.5(min) 11.5(typ)
RoHS Compliant Reach Compliant