Overview
Super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Key Features
- Low noise figure:
- NFmin. = 0.95dB (Typ.) @ f=20GHz
- High associated gain:
- Gs = 11.5dB (Typ.) @ f=20GHz
Specifications
| Frequency (GHz) | 20 |
|---|---|
| Drain-Source Voltage (V) | 2 |
| Drain Current (mA) | 10 |
| Package | GD-30 |
| Noise Figure (dB) | 0.95(typ) 1.25(max) |
| Associated Gain (dB) | 9.5(min) 11.5(typ) |
