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Super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

Key Features

  • Low noise figure:
    • NFmin. = 0.32dB (Typ.) @ f=12GHz
  • High associated gain:
    • Gs = 12.5dB (Typ.) @ f=12GHz


Frequency (GHz) 12
Drain-Source Voltage (V) 2
Drain Current (mA) 10
Package GD-30
Noise Figure (dB) 0.32(typ) 0.47(max)
Associated Gain (dB) 11.0(min) 12.5(typ)
RoHS Compliant Reach Compliant