Skip to Content
Global Sites


Super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

Key Features

  • Low noise figure:
    • NFmin. = 0.50dB (Typ.) @ f=12GHz
  • High associated gain:
    • Gs = 13dB (Typ.) @ f=12GHz


Frequency (GHz) 12
Drain-Source Voltage (V) 2
Drain Current (mA) 10
Package GD-30
Noise Figure (dB) 0.50(typ) 0.75(max)
Associated Gain (dB) 11.5(min) 13.0(typ)
RoHS Compliant Reach Compliant