Overview
Super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Key Features
- AEC-Q 101 qualified
- Low noise figure:
- NFmin. = 0.35dB (Typ.) @ f=2.4GHz
- NFmin. = 0.35dB (Typ.) @ f=4GHz
- High associated gain:
- Gs = 18.0dB (Typ.) @ f=2.4GHz
- Gs = 13.0dB (Typ.) @ f=4GHz
Specifications
| Frequency (GHz) | 4 |
|---|---|
| Frequency (MHz) | |
| Drain-Source Voltage (V) | 2 |
| Drain Current (mA) | 15 |
| Drain Voltage (V) | |
| Drain Efficiency (Min %) | |
| Output Power (W) | |
| Input Power (Typ. W) | |
| Package | GD-30 |
| Power Added Efficiency (%) | |
| Linear Power Gain (dB) | |
| Noise Figure (dB) | 0.35(typ) 0.55(max) |
| Associated Gain (dB) | 11.5(min) 13.0(typ) |
