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Super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

Key Features

  • AEC-Q 101 qualified
  • Low noise figure:
    • NFmin. = 0.35dB (Typ.) @ f=2.4GHz
    • NFmin. = 0.35dB (Typ.) @ f=4GHz
  • High associated gain:
    • Gs = 18.0dB (Typ.) @ f=2.4GHz
    • Gs = 13.0dB (Typ.) @ f=4GHz


Frequency (GHz) 4
Drain-Source Voltage (V) 2
Drain Current (mA) 15
Package GD-30
Noise Figure (dB) 0.35(typ) 0.55(max)
Associated Gain (dB) 11.5(min) 13.0(typ)
RoHS Compliant Reach Compliant