InGaP HBT (Heterojunction Bipolar Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
- L to C band low noise amplifiers
- AEC-Q101 qualified
|Drain-Source Voltage (V)||3|
|Drain Current (mA)||33|
|Linear Power Gain (dB)||15.5|