Overview
InGaP HBT (Heterojunction Bipolar Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Key Features
- L to C band low noise amplifiers
- AEC-Q101 qualified
Specifications
| Frequency (GHz) | 2.4 |
|---|---|
| Frequency (MHz) | |
| Drain-Source Voltage (V) | 3 |
| Drain Current (mA) | 33 |
| Drain Voltage (V) | |
| Drain Efficiency (Min %) | |
| Output Power (W) | |
| Input Power (Typ. W) | |
| Package | GD-30 |
| Power Added Efficiency (%) | |
| Linear Power Gain (dB) | 15.5 |
| Noise Figure (dB) | |
| Associated Gain (dB) |
