Skip to Content
Global Sites


InGaP HBT (Heterojunction Bipolar Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

Key Features

  • L to C band low noise amplifiers
  • AEC-Q101 qualified


Frequency (GHz) 2.4
Drain-Source Voltage (V) 3
Drain Current (mA) 33
Package GD-30
Linear Power Gain (dB) 15.5
RoHS Compliant Reach Compliant