Overview
InGaP HBT (Heterojunction Bipolar Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Key Features
- L to C band low noise amplifiers
- AEC-Q101 qualified
Specifications
Frequency (GHz) | 2.4 |
---|---|
Frequency (MHz) | |
Drain-Source Voltage (V) | 3 |
Drain Current (mA) | 33 |
Drain Voltage (V) | |
Drain Efficiency (Min %) | |
Output Power (W) | |
Input Power (Typ. W) | |
Package | GD-30 |
Power Added Efficiency (%) | |
Linear Power Gain (dB) | 15.5 |
Noise Figure (dB) | |
Associated Gain (dB) |

