Overview
InGaP HBT (Heterojunction Bipolar Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Key Features
- L to C band low noise amplifiers
- AEC-Q101 qualified
Specifications
| Frequency (GHz) | 2.4 |
|---|---|
| Drain-Source Voltage (V) | 3 |
| Drain Current (mA) | 33 |
| Package | GD-30 |
| Linear Power Gain (dB) | 15.5 |
