Skip to Content
Global Sites


InGaP HBT (Heterojunction Bipolar Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

Key Features

  • L to C band low noise amplifiers
  • AEC-Q101 qualified


Frequency (GHz) 2.4
Frequency (MHz)
Drain-Source Voltage (V) 3
Drain Current (mA) 33
Drain Voltage (V)
Drain Efficiency (Min %)
Output Power (W)
Input Power (Typ. W)
Package GD-30
Power Added Efficiency (%)
Linear Power Gain (dB) 15.5
Noise Figure (dB)
Associated Gain (dB)
RoHS Compliant Reach Compliant